Method of manufacturing a semiconductor device having an out diffusion preventing film

摘要

A method of manufacturing a semiconductor device comprises the steps of: forming an insulative film onto a semiconductor substrate; forming openings into said insulative film; implanting desired impurities into the semiconductor substrate through at least the openings; forming an out diffusion preventing film onto the surfaces of the semiconductor substrate exposed in at least the opening portions after the impurities have been implanted; annealing the semiconductor substrate after the out diffusion preventing film has been formed; and forming a conductive layer onto the out diffusion preventing film.