METHOD FOR JOINING SILICON SEMICONDUCTOR SUBSTRATE

摘要

A method for joining silicon semiconductor substrate in which first semiconductor wafers (2, 5 and 9) having specular-finished main surfaces and stuck to second semiconductor wafers (3, 6 and 10), wherein the surfaces of either the first or second semiconductor wafers are rendered hydrophilic, while the surfaces of the other semiconductor wafers are rendered water-repellent, and then the treated main surfaces of the first and second wafers are stuck to each other and heat-treated, thereby reducing the occurrence of voids and contamination of the joint interfaces with contaminants.