| 摘要 |
A high-power RF switching device (30) employs a semiconductor wafer (38) positioned in the third port of a three-port RF device (30). A controllable source of directed energy (36), such as a suitable laser or electron beam, is aimed at the semiconductor material (38). When the source (36) is turned on, the energy incident on the wafer (38) induces an electron-hole plasma layer on the wafer (38), changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and causing all incident RF signals to be reflected from the surface of the wafer (38). By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer (38) by RF with high peak power. The switch is useful to the construction of an improved pulse compression system, for example, to boost the peak power of microwave tubes driving linear accelerators.
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