发明名称 IN SITU METHOD FOR METALIZING A SEMICONDUCTOR CATALYST
摘要 <p>A semiconductor catalyst is metalized in situ on a reaction support surface by illuminating at least a portion of the catalyst in the presence of a suitable source of metal to selectively deposit the metal on the illuminated portions. The source of metal can be applied to the reaction support surface either with the catalyst or separately, but is not attached to the catalyst until the structure is illuminated. This causes the metal to be deposited where the catalyst will be illuminated during use and therefore where photopromoted catalytic degradation can occur.</p>
申请公布号 WO1997040937(A1) 申请公布日期 1997.11.06
申请号 US1997007269 申请日期 1997.04.30
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址