Removing metal impurities from silicon metalloid surface

摘要

Process for removing metal impurities from the surface of a silicon metalloid comprises: (a) contacting the metalloid with vapour phase hydrofluoric acid at 15-100 deg C; and (b) contacting the metalloid with an aqueous solution containing /2 wt.% H2O2. Also claimed is a process for analysing silicon on metal surface impurities comprising: (A) carrying out the removal process as above; and (B) analysing the aqueous phase to determine the metal concentration by graphite furnace atomic absorption, inductively coupled plasma mass spectrometry, and ion chromatography.