| 摘要 |
An apparatus and method for the growth and etching of materials where a substrate on which a film is being deposited or which is being etched is maintained at a lower temperature than a precursor cracking temperature. The apparatus includes a susceptor (10) with separators (11), made of an optically transmissive material with low thermal conductivity, such as quartz, upon which the substates (12) are mounted. The susceptor (10) is heated to a precursor cracking temperature while the substrates (12) are maintained at a lower deposition temperature by the separators (11). The substrates are heated by black body radiation transmitted through the separators (11) to the substrates (12). |
