Plasma-Ätzverfahren einer Silizium enthaltenden Schicht,申请号DE19926020398T-传众专利搜索

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发明名称	Plasma-Ätzverfahren einer Silizium enthaltenden Schicht
摘要
申请公布号	DE69220398(T2)	申请公布日期	1997.11.06
申请号	DE19926020398T	申请日期	1992.03.13
申请人	TOKYO ELECTRON LTD., TOKIO/TOKYO, JP	发明人	HIGUCHI, FUMIHIKO, C/O OPERATIONAL HEAD OFFICE, 2-30-7 SUMIYOSHI-CHO, FUCHU TOKYO 183, JP;FUKASAWA, YOSHIO, C/O OPERATIONAL HEAD OFFICE, 2-30-7 SUMIYOSHI-CHO, FUCHU TOKYO 183, JP
分类号	H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/321;H01L21/306;H01L21/311	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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