SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor laser is provided with an active layer and a pair of clad layers formed so as to hold the active layer in between. The laser also has a stripe structure to form a carrier injecting area to the active layer in a stripe-like state toward a resonator. The stripe structure is constructed so that a relation W1<W2 can be satisfied between the width W1 of the structure at the emitting-side end face of the resonator and the width W2 of the structure at the opposite end face of the resonator and, in additon, the width of the structure can be reduced to W1 from W2 in the direction of the resonator. The W2 is set at about 2 mu m or wider.