发明名称
摘要 <p>PURPOSE:To obtain a varistor suitable for low voltage by a method wherein high-speed noise is effectively absorbed by diffusing the glassy oxide such as Bi, Pb, Zn, Cu, Na, B, Si and the like into a crystal grain boundary. CONSTITUTION:A semiconductor porcelain is mainly composed of SrTiO3, and it contains at least a kind of 0.05 to 1wt.% selected from the group consisting of oxides such as a rare-earth element, Nb, W and Ta as a semiconductivity- giving agent. A glassy oxide is diffused into the crystal grain boundary of the semiconductor porcelain. A composite functional element is formed using the semiconductor porcelain. As a result, an excellent non-linear of voltage can be accomplished as in the state wherein the large electrostatic capacitance of an SrTiO3 semiconductor porcelain is being maintained. As a result, high speed noise can be absorbed effectively, and a varistor suitable for low voltage can also be obtained.</p>
申请公布号 JP2671928(B2) 申请公布日期 1997.11.05
申请号 JP19880201417 申请日期 1988.08.11
申请人 发明人
分类号 H01G4/12;H01C7/10;(IPC1-7):H01C7/10 主分类号 H01G4/12
代理机构 代理人
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