| 摘要 |
In a multilayered integrated memory circuit, a method using an insulating "sticks" is disclosed to provide a contact between two layers or regions, or one of each, where the contact does not short to an intervening conductive layer. This invention provides this with minimal extra processing by using sacrificial layers with appropriate etch and etch stop properties. As these layers are etched, additional layers which alternate in the same conducting/insulating pattern are exposed. Each etch stops on either a conductive or insulative layer. A contact layer may then be deposited which connects the uppermost capacitor plate to the pass transistor of the memory cell. <IMAGE> |
