| 摘要 |
A germanium body containing impurities therein, such as B or Al is provided with a layer of a gettering material such as pure Si or SiO2, along at least one surface of the body, a melt zone is generated about the so-coated body and passed a number of times from one end of the body to the other whereby the gettering material binds the impurities within the germanium body and complex-impurity compounds accumulate at the respective ends of the body. After a desired degree of purity is achieved, the melt zone is deenergized and the impurity-containing ends are severed from the remaining body portion and any excess gettering material is removed. |
