| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device of high level integration wherein a contact hole which is smaller than the resolution of photoengraving, low resistive and excellent in step coverage is stably formed in a desired scale, by etching at a low aspect ratio without electrically short-circuiting with other wirings, and a manufacturing method of the semiconductor device. SOLUTION: First insulating film layers 9, 10 and a second insulating film layer 11 whose etching selection ratio is large to the uppermost layer 10 of the first insulating film layers are formed on a wiring layer 4 on a semiconductor substrate 1, and a side wall spacer 14 is formed on the inside wall of a hole on the second insulating film layer 11. After that, a hole smaller than the resolution of photoengraving is formed on the first insulating film layers 9, 10. |
