| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an AMX(active matrix) substrate having high yield by preventing a disconnection due to the redundant fualt of a scan line and the insulative fualt of a scan line-signal line crossing part to be generated by the misposition between an oxidized film or the like and a signal line. SOLUTION: This active matrix substrate is constituted of the a gate insulating film 4 provided on a gate electrode 10, a thin film transistor 12 consisting of a semiconductor layer 5 provided on the gate insulating film 4 and the source electrode 9 and the drain electrode 8 provided on the semiconductor layer 5 by being confronted, scan lines to be connected to the gate electrode 10, signal lines to be connected to either the drain electrode 8 or the source electrode 9 and a pixel electrode 7 to be connected to the electrode of other side. In this case, layer constitutions of the scan line and the gate electrode 10 are differentiated by constituting the scan line with first and second metallic films capable of an anodic chemical conversion and by constituting the gate electrode 10 with the first metallic film.</p> |
