INSULATION FILM USED FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent electron trapping and improve moisture resistance. SOLUTION: When a CVD film (interlayer insulation film or passivation film) is manufactured using stock gas containing gas having an Si-H bond, production of electron trapping in a gate oxide film or a tunnel oxide film is suppressed by setting the amount of the Si-H bond in the CVD film to 0.6×10<21> cm<-3> or less, and hence a threshold of a transistor is prevented from being varied. Further, moisture resistance is improved by the refractive index of the CVD film to 1.65 or more or nitrogen concentration in the CVD film to 3×10<21> cm<-3> or more.