| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-efficiency specified GaAlInN laser element having an optical guide structure having a refractive index distribution in horizontal direction by forming a ridge stripe-like second conductivity type upper clad layer extending toward a resonator. SOLUTION: A Gax Aly In1-x-y N (0<=x<=1, 0<=y<=1, x+y<=1) laser element has a ridge stripe shape. The surface protection of a ridge stripe-like p-type GaAlN upper clad layer 21b may have a double layer structure formed by leaving a SiO2 film used for the selective growth and laminating an Al2 O3 film 9 thereon. Thus it is possible to suppress the poor current injection, lower the oscillation threshold level and reduce the astigmatic difference of the GaN compd. semiconductor laser element having the ridge strip structure as well as to double the protective film of the upper clad layer 21b to thereby elevate the protection effect and improve the lift of the laser element. |
