发明名称 |
Fixed resistance high density parallel ROM device |
摘要 |
The present invention provides a fixed resistance sense-routed high density parallel ROM device for maintaining the resistance of a buried N+ region on a sense route constant. When data is read from a ROM cell matrix, the selection of different ROM cell transistors does not change the resistance of the buried N+ region on the sense route and thus enables a simplified design of a sense amplifier. The inactive select gate or transfer gate that is activated by the select line can be isolated by ion implantation for forming a buried P+ isolation and thus avoiding the narrowing or the cutting-off of the width of the active transfer gate or select gate due to ion diffusion.
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申请公布号 |
US5684733(A) |
申请公布日期 |
1997.11.04 |
申请号 |
US19960722303 |
申请日期 |
1996.09.30 |
申请人 |
HOLTEK MICROELECTRONICS, INC. |
发明人 |
WU, CHI-YUNG;CHEN, LING;PENG, TONG |
分类号 |
G11C17/12;H01L27/112;(IPC1-7):G11C13/00 |
主分类号 |
G11C17/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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