| 摘要 |
A first magnetoresistive (MR) element of an MR element portion of the MR sensor has line patterns of a ferromagnetic thin film, that are arranged in parallel to each other, and connecting patterns that connect ends of the line patterns. The resistance of the MR element is set only by the length of the ferromagnetic thin film, irrespective of formation and removal of an Au layer. The connecting patterns, that connect between the line patterns of the ferromagnetic thin film, are designed in a configuration so as not to be influenced by a magnetic field which may cause variation of resistance value of the ferromagnetic thin film of the line pattern. The end of the connecting portion pattern is formed into an angle configuration having a portion oriented at a 45 DEG angle relative to the longitudinal direction of the line pattern. This avoids influence of the applied magnetic field. Adjacent to the outermost line pattern, an adjacent pattern is arranged. Second to fourth MR elements have the same construction. The four MR elements are connected in a form of bridge so that a potential difference, depending upon variation of the magnetic field, is obtained through a terminal. The connecting pattern can be of any configuration so long as influence of the magnetic field can be avoided, and thus, an arc-shaped configuration may be used.
|
