发明名称 CDTE THIN FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a wider band gap than the original one of CdTe by sputtering at specified vol. ratio and specified pressure of an Ar-N2 mixed gas for the atmosphere gas. SOLUTION: Ar and N2 , are fed from an Ar and N2 , gas feed pipes 3 and 4 into a vacuum vessel 1 to provide an atmosphere gas pressure ranging from 2×10<-4> to 1×10<-2> Torr, an an Ar-N2 mixed ion beam 13 irradiated on a target from an ion source 7 at 3kV, 1.1mA/cm<2> to form a CdTe thin film on a glass substrate 5. The band gap adaptive to the visual range is adjustable with the mixed gas's mix ratio N2 /(Ar+N2 ) ranging from 0 to 0.8. Thus it is possible to widen the band gap of the CdTe thin film in excess of its proper value of 1.44eV, this allowing the band gap to be changed in the visual range.
申请公布号 JPH09289217(A) 申请公布日期 1997.11.04
申请号 JP19960101060 申请日期 1996.04.23
申请人 SUMITOMO METAL MINING CO LTD 发明人 MATSUMURA NAOMI;TANAKA AKIKAZU
分类号 C23C14/14;C23C14/34;H01L21/203;H01L21/363;H01L31/0248;(IPC1-7):H01L21/363;H01L31/024 主分类号 C23C14/14
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