| 摘要 |
A plasma processing apparatus includes an air-tight chamber consisting of a conductive material, which is grounded, a susceptor provided in the air-tight chamber, for supporting a wafer to be processed, and an RF antenna constituted by a flat coil which is provided in the air-tight chamber to oppose, at a predetermined gap, the wafer which is mounted on the susceptor. A process gas is supplied into the chamber, and an RF power is applied to the RF antenna to generate a plasma between the antenna and the wafer, thereby processing the wafer with the plasma.
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