| 摘要 |
A multilayered interconnection of a semiconductor device includes a substrate, an underside interconnection layer formed on the substrate, an interlayer insulation film formed on the underside interconnection layer, an upperside interconnection layer formed on the interlayer insulation film, a contact hole formed through the upperside interconnection layer and into the interlayer insulation film, and a plug formed in the contact hole so that the plug contacts an upper part of the underside interconnection layer and a side of the upperside interconnection layer.
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