| 摘要 |
A fabrication technique for improved dielectric isolation of adjacent, electronic devices or electrically controllable optical devices provides an inter-device resistance in excess of 1 M OMEGA . Strips of a silicon oxide material, such as SiO2, are formed between the devices after device formation but prior to regrowth of an electrically conductive cap layer and subsequent metallization. The presence of the SiO2 strips prevents regrowth of the cap layer between the adjacent devices.
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