| 摘要 |
PROBLEM TO BE SOLVED: To enable dusts to be markedly reduced by a method wherein a large number of fine through-holes where reaction gas passes through are provided to a plasma etching electrode, and the inner surfaces of the fine through-holes are prescribed in surface roughness. SOLUTION: A large number of fine through-holes 2 where reaction gas is made to pass through are provided to a plasma etching electrode 1. The inner surface of the through-hole 2 is set at Ra of 8 to 0.001μm. It is preferable that the electrode 1 is formed of glassy carbon or metal silicon. In this case, all the electrode may be formed of the above material, or only a part of the electrode consumed by plasma may be formed of the above material. By this setup, particles are extremely restrained from falling off, so that a product can be accurately formed by etching without being contaminated.
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