发明名称 Active semiconductor device with matched reference component maintained in breakdown mode
摘要 PCT No. PCT/CA94/00378 Sec. 371 Date May 9, 1996 Sec. 102(e) Date May 9, 1996 PCT Filed Jul. 13, 1994 PCT Pub. No. WO95/02859 PCT Pub. Date Jan. 26, 1995A method of improving the performance of an active semiconductor device with a voltage-controllable channel length, comprises providing a matched reference component having similar operating characteristics to the active semiconductor device, continually monitoring the breakdown voltage of the matched reference component, and maintaining the operating voltage of the active semiconductor device to lie just below the measured breakdown voltage of the matched reference component. In this way, the performance of the active component can be optimized.
申请公布号 US5684390(A) 申请公布日期 1997.11.04
申请号 US19960583114 申请日期 1996.05.09
申请人 MITEL CORPORATION 发明人 ORCHARD-WEBB, JONATHAN
分类号 G05F3/24;G05F1/56;G11C11/407;H03K17/14;H03K19/003;(IPC1-7):G05F1/575 主分类号 G05F3/24
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