| 摘要 |
PROBLEM TO BE SOLVED: To enable not only a pattern to be formed conforming to the design specifications of a semiconductor device but also an LSI chip to be lessened in size, by a method wherein a mask split into two pieces which contain no rectangular pattern and whose logical product becomes a required pattern is used, and application of resist, light exposure, development, and removal are successively carried out. SOLUTION: A mask used for an LSI gate electrode has a shape composed of a gate mask pattern 10 and an adjacent gate 14, and the mask is split in a first mask 30 and a second mask 35. At this point, the masks 30 and 35 do not include the rectangular shape of a gate electrode terminal, and the logical product of the masks 30 and 35 are set equal to the above shape composed of the gate mask pattern 10 and the adjacent gate 14. After an element isolating film is formed, a film is formed to serve as a gate electrode, resist is applied, light exposure and development are carried out using the first mask 30 for the formation of a gate electrode pattern, the resist pattern is removed, and then a gate electrode pattern is formed using the second mask 35 the same as above. |
