| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and its manufacture in which the surface area of a contact hole is increased and the surface area of a capacitor formed of a first layer conductor film, a dielectric film and a second layer conductor film is increased with a simple process. SOLUTION: In the semiconductor storage device, an impurity diffusion layer 12 and an interlayer insulation film 13 are formed on a semiconductor substrate 11, an impurity diffusion layer 16 is formed on a recessed part serving as a cell contact formed in part of the semiconductor substrate 11, and a first layer conductor film 15 having a recessed part in the impurity diffusion layer 16, and a dielectric film 17 having a recessed part is formed on the upper face of the first layer conductor film 15, and a second layer conductor film 18 is formed on the dielectric film 17. |
