| 摘要 |
PROBLEM TO BE SOLVED: To obtain semiconductor devices such as a light-emitting element, a solar cell having good characteristics with a semiconductor BCN compound by laminating a semiconductor BCN compound layer, a metallic BCN compound layer and/or an insulating BCN compound layer. SOLUTION: A graphite substrate 11 is put into a CVD device, CH4 together with Ar of carrier gas is made to flow so as to grow a graphite layer 12. Next, BCL3 , CH4 , NH3 , and H2 S together with Ar and H2 S as an n-type dopant source are made to flow so at to grow an n-type BCN layer 13 followed by increasing a flow rate of CH4 for growing an n-type BC2 N layer 14. Next, BCL, CH4 , NH3 and Zn(C2 H5 )7 as a p-type dopant source are made to flow so at to grow p-type BC2 N15 followed by reducing a flow of CH4 so as to grow a p-type BCN layer 16. Later, a BN film 17 and a graphite electrode 18 are made to grow and Au electrodes 19, 20 are vapor-deposited on the faces. |
