发明名称 SUPER-LATTICE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To improve light-emitting efficiency at low cost by a method wherein the thickness of each barrier layer and the thickness of each quantum well layer are provided so that a level at an X point of the barrier layer, a primary level at a Γ point of the quantum well layer adjacent to one side and a secondary level at a Γ point of the quantum well layer adjacent to the other side are mutually resonated. SOLUTION: When a reverse bias voltage is applied between electrodes 11 and 12, a first level X1 point of a barrier layer 21-N conforms to a first level Γ1 point of a quantum well layer 22-(N-1) adjacent to the barrier layer 21-N, so that the first level X1 point of the barrier layer 21-N and the first level Γ1 point of the quantum well layer 22-(N-1) are mutually resonated. Further, the first level X1 point of the barrier layer 21-N conforms to a second level Γ2 point of a quantum well layer 22-N adjacent to the barrier layer 21-N, so that the first level X1 point of the barrier layer 21-N and the second level Γ2 point of the quantum well layer 22-N adjacent to the barrier layer 21-N are mutually resonated. Therefore, a thickness of each of barrier layers 21-0 to 21-N and a thickness of each of quantum well layers 22-0 to 22-N are set so as to satisfy them.
申请公布号 JPH09283849(A) 申请公布日期 1997.10.31
申请号 JP19960088535 申请日期 1996.04.10
申请人 ATR KODENPA TSUSHIN KENKYUSHO:KK 发明人 MIMURA SHUSUKE;HOSODA MAKOTO;OTANI NAOKI;TOMINAGA KOJI;WATANABE TOSHIHIDE
分类号 H01L29/06;H01L29/15;H01L33/06;H01L33/10;H01L33/30;H01S5/00 主分类号 H01L29/06
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