发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A MOS transistor consists of a gate insulating film, a gate electrode, a pair of sidewall spacers on the side faces of the gate electrode, lightly doped source/drain regions, and heavily doped source/drain regions, which are located below the sidewall spacers. Between the sidewall spacers and an isolation are formed concave portions. On a silicon substrate in the concave portions are formed insulating films for capacitance reduction. On the insulating films for capacitance reduction are formed withdrawn electrodes. The heavily doped source/drain regions are electrically connected to the withdrawn electrodes between the sidewall spacers and the insulating films for capacitance reduction. Consequently, a pn junction capacitance beneath the source/drain regions is reduced, while the contact area between the source/drain regions and wiring is surely obtained, thereby achieving higher integration of the MOS transistors.
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申请公布号 |
US5683921(A) |
申请公布日期 |
1997.11.04 |
申请号 |
US19950393673 |
申请日期 |
1995.02.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NISHIO, MIKIO;AKAMATSU, SUSUMU;OKUDA, YASUSI |
分类号 |
H01L21/336;H01L29/06;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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