METHOD FOR MANUFACTURING HIGH RESISTANCE GALLIUM ARSENIDE ON SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To contrive to reduce a mixing amount of silicon atoms into gallium arsenide by a method wherein, when gallium arsenic is crystal-grown by a MOCVD method using a lateral furnace on a silicon substrate, the speed of a gas running fluid on the silicon substrate is set to be 80 to 120cm/sec. SOLUTION: A cleaned silicon substrate 2 is mounted in a reaction chamber of a MOCVD device, the gross hydrogen flux for supplying to the reaction chamber is set to be 13slm, gas pressure is decompressed to be 40Torr, and the speed of a gas running fluid above the silicon substrate 2 is adjusted so as to be 80 to 120cm/sec. Thereafter, the silicon substrate 2 is rotated at 10rpm, while it is heated at 870 deg.C, arsine gas is flown and it is heated at 10min. Next, a temperature of the silicon substrate 2 is set to be 400 deg.C, a flux ratio of arsine gas to trimethyl gallium is set to be 40:1, reaction gas is supplied for 4min., and gallium arsenide of 150Åis crystal-grown on the silicon substrate. Accordingly, it is possible to reduce a mixing amount of silicon atoms into gallium arsenide.