| 摘要 |
PROBLEM TO BE SOLVED: To eliminate troublesome cleaning for removal of impurity material by using different aligns in a lithography process before the manufacturing process for deposition a material which causes impurity contamination in a substrate and in a lithography process after the deposit manufacturing process. SOLUTION: An isolation region 72 is formed on the surface of a substrate 71, a word line 73 wherein polycrystalline silicon and silicon oxide are deposited is formed, silicon oxide is applied, a side spacer 74 is formed in a side wall of the word line 73 and an n-diffusion layer 75 is formed. Successively, a data line 76 consisting of polycrystalline silicon is formed, and a platinum film is deposited and processed for forming a storage electrode 78. Thereafter, a capacitor insulation film 79 is formed, polycrystalline silicon is applied for forming a plate electrode 80, a wiring 81 is formed and a DRAM is obtained. In this method, an aligner A is used in a lithography process before a process for depositing platinum and an aligner B is used in a lithography process after a process for depositing platinum. |
