发明名称 STRUCTURE OF HALFTONE PHASE SHIFT MASK AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To prevent the increase of side lobes and to enable exact alignment by forming first light shielding parts for shutting off light between key patterns and forming second light shielding parts to allow the transmission of a part of the light in the regions where cell patterns are formed. SOLUTION: This structure has a substrate 34, the regions 31 where the cell patterns of the substrate 34 are formed, the first light shielding layers 35 formed in the parts excluding overlay monitor key patterns 32 and alignment key patterns 33 parts and the second light shielding layers 36 formed on the first eight shielding layers 35. A quartz or glass substrate is used for the substrate 34. The first light shielding layers 35 completely shut off the light. Any one among CrO, Cr2 O5 , CrON, SiN, WSi, MoSiO and MoSiON is used for the second light shielding layers 36. The second light shielding layers 36 are formed at a thickness at which the phase of the light may be shifted. The transmittance of the light is specified to about 5 to 10%. As a result, the side lobe by the formation of the key patterns 32, 33 is prevented and the formation of the exact patterns is made possible.
申请公布号 JPH09281690(A) 申请公布日期 1997.10.31
申请号 JP19960339123 申请日期 1996.12.05
申请人 L JII SEMICON CO LTD 发明人 HIYON ZO YAN;BIYON CHIYAN KIMU
分类号 G03F1/29;G03F1/32;G03F1/68;G03F1/80;H01L21/027 主分类号 G03F1/29
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