| 摘要 |
PROBLEM TO BE SOLVED: To prevent also a light emitted from a light-emitting layer on the rear side of a substrate from being absorbed for using it effectively so as to heighten light-emitting efficiency by using an AlGaAs semiconductor layer as a substrate for holding the light-emitting layer. SOLUTION: A first window layer 1 consisting of an AlGaAs group material, a light-emitting layer 2 consisting of an AlGaInP group material and a second window layer 3 consisting of an AlGaAs group material are by turns grown epitaxially and an AlGaAs group semiconductor layer 4 is formed on the second window layer 3 by a liquid phase epitaxial growth method and an AlGaAs group semiconder layer 4 subjected to liquid growth by removing the GaAs substrate 11 is made a new substrate so as to from electrodes 5, 6 on both faces of the laminated semiconductor layer. Therefore, a thick window layer can be formed in a short time and a light-fetching efficiency can be improved by diffusing a current allover the chip. |
