| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting element which can set the composition ratio of In to a high value while crystallinity is satisfactorily maintained through the use of an InGaN system material for the material of an active layer and can discharge red light with high luminance. SOLUTION: An n type clad layer 31, an active layer 32 and a p type clad layer 33, which constitute the double hetero junction structure of the light- emitting element, are formed by the InGaN system materials. It is preferable to grow the double hetero junction structure 3 on a crystalline substrate 1 through a buffer layer 2 for giving the respective layers satisfactory crystallinity. Sapphire, 6H-SiC, MgAl2 O4 (spinel), LiAlO2 and LiGaO2 are given for the crystalline substrate 1, and AlN, GaN, InGaN and AlGaN are given for the buffer layer 2. It is preferable to use MOVPE for the forming method of the buffer layer 2 and double hetero junction structure. Inx Ga1-x N of the active layer is 0.7<=x and red emission light is obtained. |
