| 摘要 |
PROBLEM TO BE SOLVED: To realize a structure where the operating voltage is not determined according to the barrier height caused by a depletion layer at a contact plane by forming an impurity layer on an oxide semiconductor at the interface between this semiconductor and intermediate layer by the delta doping method. SOLUTION: The oxide electronic device comprises an oxide semiconductor 11, intermediate layer 12, cathode electrode 13, anode electrode 14, impurity layers 15, 16 formed by the delta doping method, and oxide semiconductor layer 11A inserted between the intermediate layer 12 and impurity layer 15 or 16. The oxide semiconductor 11 provides a low operating voltage enough to raise the current density and allows the operating voltage to be controlled by controlling the activity of La and quantity of dopant. Since LaTiO3 , is used for the delta doping, the crystal matching with the oxide semiconductor 11 of SrTiO3 , is good enough to result in easy regrowth of SrTiO3 . Thus it is possible to reduce the operating voltage of the oxide electronic device. |
