| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to drastically shorten the time required for establishing exposure conditions and to drastically reduce the cost required for establishing the conditions. SOLUTION: Graphic conditions of forming patterns, scattering conditions α, β of electrons, accumulated energy conditions η, Eth, Qc/Qp and permissible error range ε are inputted and an exposure energy distribution Ed relating to respective forming patterns is determined. The respective forming pattern sizes Dd are determined by comparing this distribution with the threshold value Eth of accumulated energy. The size difference (e) between the Dd and a designed pattern size Ds is determined. This size difference (e) is determined by repeating the procedures with all the patterns. The min. design pattern size Dsmin at which the Ds is minimized within the ε described above is determined. This Dsmin is repetitively determined with all the patterns. The Qc/Qp at which the distribution of the Dsmin is minimized is determined. |
