| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field electron emission element in which an emitter shape can be formed with a high accuracy and high reproducibility. SOLUTION: An emitter 7 is laminated via an intermediate supporter 13 made of silicon, on a base electrode 2, and is formed by layering alternately the emitter material 8 in 3 layers made of tungsten and electrically conductive material 9 in 2 layers made of silicon. A film thickness of the emitter material 8 is approx. several 100mm, and the edge 8a of the emitter material layer 8 projects out in the direction of horizontal plane by hundreds nm from the conductive material layer 9. The emitter material layer 8 and the gate electrode 3 are facing each other with a space 14. Since the emitter material layer 8 is made to be in a thin film, its sectional shape is so sharp that electric field is centered at the edge 8a of the emitter material layer 8, and field emission is easy to be generated.</p> |
