| 摘要 |
PROBLEM TO BE SOLVED: To reduce the time required for positioning each shot region on a photosensitive substrate, such as, a wafer, at an exposure position of a pattern formed on a mask, such as, a reticle. SOLUTION: An n-th exposure region (n being an integer equal to or greater than 2) of a photosensitive substrate W is driven to a predetermined target position. Then, the amount of relative misalignment▵X between a pattern of a reticle R and the n-th exposure region is detected, and the reticle R is driven so as to reduce the detected amount of misalignment▵X. Prior to the operation to reduce the amount of misalignment▵X with respect to the n-th exposure region, the reticle R is driven in advance to a predetermined position on the basis of a driven state of the reticle R already made with respect to the (n-1)th and preceding exposure regions of the photosensitive substrate W. When the amount of misalignment▵X becomes equal to or less than a predetermined allowable value, transfer exposure of the pattern to the n-th exposure region is carried out. |
