SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit with low power consumption by applying an operating voltage level-shifted by a voltage equivalent to a threshold voltage of a 2nd conductivity type MOSFET to a source of the 2nd conductivity type MOSFET in the combination of 1st and 2nd conductivity type MOSFETs. SOLUTION: A signal from a CMOS circuit is fed to a CMOS inverter circuit composed of transistors (TRs) QP, QN via an N-channel transfer gate MOSFETQ1. A voltage amplitude of an input signal transmitted to the CMOS inverter circuit is expressed by a high level (Vcc -Vth ) that is subtraction of a threshold voltage Vth of the MOSFETQ1 from a power supply voltage Vcc and a low ground level Vss of the circuit. When the high level (Vcc -Vth ) is inputted to the circuit, a voltage equivalent to the threshold voltage Vth is applied between a gate and a source of the P-channel MOSFET QP, the FET QP is conductive to prevent a DC current from flowing through the conductive QN. The operating voltage Vcc is applied to the source of the QP via a TR Q3 to maintain low power consumption.