ACTIVE MATRIX SUBSTRATE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To simplify the production process and obtain a good TFT characteristics by side-etching a semiconductor layer beneath a channel protective insulation film at forming a first and second contact layers. SOLUTION: After forming resist patterns 12 of a first and second contact layers 6a, 6b, they are dry etched with SF6 gas to result in that a semiconductor 4 below the ends of a channel protective insulation film pattern not overlapped with the resist patterns of the contact layers 6a, 6b are side-etched to form spaces, depending on the quantity of overetching. The channel protective insulation film part is etched to be removed according to a pattern to form source and drain electrodes 7 and 8. This reduces the OFF-current Ioff of a TFT, without producing a conductive reaction layer 10 at the semiconductor layer side faces to be a leak path of the TFT.