| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture a polycrystal silicon substrate at a high speed using a low-cost substrate not through a dehydrogenizing step by a method wherein, after amorphous silicon is formed on the substrate by a sputtering method, this amorphous silicon is continuously heated to by polycrystalized. SOLUTION: A shield film 2 composed of a-Si is formed on a glass substrate, an undercoat film 3 is coated thereon, and an a-Si film is formed by a sputtering method. Thereafter, a polycrystal silicon 4 is formed by laser annealing to be patterned. A gate insulation film 5 is formed thereon, and further a gate electrode 6 is formed to be patterned, and with the use of the gate electrode 6 as a mask, an ion doping is performed to the polycrystal silicon, a source region 4a and a drain region 4b are formed, and besides an insulation film 7 is formed on the entire face. Further, a through hole is opened on the source region 4a and drain region 4b of the insulation film, and a source electrode 8a and a drain electrode 8b are formed to obtain a thin film transistor.</p> |
