| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to reduce leakage current by holding an insulating material between a metal case and an enclosure or between a fin adhering to the metal case and the enclosure to produce electrostatic capacity. SOLUTION: A device is electrically connected to an electrode 2 on the front side of a plate-like semiconductor device 1, the rear side is fixed to a metal case 4 through an insulating material 3 to connect the semiconductor device 1 to the metal case 4 electrically and, at the same time, an insulating case 5 for protecting the semiconductor device 1 from the atmosphere is provided in space from the side of the metal case 4 to the electrode 2. Since a dielectric of the insulating material 3 is provided between the semiconductor device 1 and metal case 4, a first electrostatic capacity is produced and, at the same time, since a dielectric of an insulating material 8 is provided between the metal case 4 and an enclosure 6, a second electrostatic capacity 11 is formed to provide composite electrostatic capacity connected in series between the semiconductor device 1 and an earth line. Accordingly, value of electrostatic capacity capable of reducing leakage current is selected to make it possible to reduce selectively leakage current. |
