| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple method for forming SiO2 as a protection film on a structure having an electrode on a compound semiconductor layer constituting a light-emitting element. SOLUTION: An N-type AlGaAs layer 2 is provided on a P-type AlGaAs layer 1, and the N-type layer 2 is formed into a mesa form with wet etching. Then, an AuGeNi electrode 3 is formed on the N-type layer 2. When the whole structure is immersed into treatment liquid obtained by adding boric acid to hydrofluosilic acid solution obtained by saturating silicon dioxide, SiO2 is deposited on the structure where the upper part of the AgGeNi electrode is removed and the SiO2 film 6 is formed. The SiO2 film is not formed on the electrode 3 and a contact hole 4 is obtained. |
