| 摘要 |
PROBLEM TO BE SOLVED: To form a high-quality III-V mixed crystal semiconductor having a larger N compsn., without increasing the hole concn, of the V group element. SOLUTION: A semiconductor manufacturing method for forming at least a III-V mixed crystal semiconductor layer composed of a plurality of V group elements, including N and As on a specified semiconductor substrate 41 comprises steps crystal-growing this semiconductor layer on the substrate being heated at 550 deg.C or more by the org. metal chemical vapor deposition (MOCVD) method using an org. nitrogen compd. for the N source and AsH3 for the As source while the AsH3 partial pressure in a reaction furnace is 2Pa or more. |
