| 摘要 |
PROBLEM TO BE SOLVED: To contrive the improvement of the evenness of an etching rate to a semiconductor wafer and a reduction in the wastage rate of of the surface of an electrode plate by a method wherein the electrode plate for plasma etching use is constituted of a glassy carbon plate, which has a specified heat conductivity at a specified temperature and has a specified thickness. SOLUTION: An electrode plate for plasma etching use has an even texture obtainable by firing and carbonizing a thermosetting resin and consists of a disc-shaped glass carbon plate. This glass carbon plate has the characteristic of a heat conductivity of 5w/m.K or higher at a temperature of 300K. A glassy carbon plate having a thickness of 4.5mm or thicker in addition to this characteristic is selected as the electrode plate. As the glass carbon plate of a high heat conductivity is good in heat conduction, the fluctuations of temperature of the electrode plate are reduced to equalize the surface temperature distribution of the electrode plate. The heat capacity of the glass carbon plate of a thick wall thickness is increased and the fluctuations of the surface temperature distribution of the electrode plate are effectively inhibited. Thereby, a large-sized semiconductor wafer can be treated at an even etching rate. |
