发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To decrease a necessary margin at the time of bonding by a method wherein a pad electrode part is formed higher than other uppermost wiring layer, the surfaces comprising the surface of the pad electrode part and the surfaces of the sidewalls of the uppermost wiring layer are covered with a passivation film to make the upper surface of the passivation film flush with the upper surface of the pad electrode part and to expose the pad electrode part. SOLUTION: A lower wiring layer and an interlayer film 101 are formed and thereafter, an insulating film 102 is grown, the film 102 is patterned in such a way as to remain on a position where a pad electrode part 103a is formed, and the pad electrode part 103a is formed higher then other uppermost aluminum wiring layer 103. The surfaces comprising the surface of the electrode part 103a and the sidewall surfaces of the layer 103 are coated with a passiavation film 104, such as a plasma oxide film, then, the upper surface of the film 104 and the upper surface of the electrode part 104a are formed into the same surface to expose the electrode part 103a selectively. Accordingly, good bonding is made possible.
申请公布号 JPH09283554(A) 申请公布日期 1997.10.31
申请号 JP19960096850 申请日期 1996.04.18
申请人 NEC CORP 发明人 ONUMA TAKUJI
分类号 H01L21/60 主分类号 H01L21/60
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