POLYCRYSTAL SEMICONDUCTOR THIN FILM, FORMATION THEREOF, POLYCRYTAL SEMICONDUCTOR TFT AND TFT BOARD

摘要

PROBLEM TO BE SOLVED: To form a polycrystal semiconductor thin film transistor(TFT) of high performance. SOLUTION: In a high speed beam annealing method, a separate scanning speed VX exists between a region A exhibiting random orientation and a region G exhibiting anisotropy separately with respect to field-effect mobility 1 in a direction parallel to the scanning direction and field-effect mobility 2 in a direction perpendicular to the scanning direction. Beam annealing is performed at a scanning speed within a range of 90-110% of a spontaneous crystallization speed Vp exhibiting substantially the peak of the field-effect mobility 1 in the parallel direction. Thus, a polycrystal silicon semiconductor thin film having a stripe width not less than 40μm is formed.