| 摘要 |
PROBLEM TO BE SOLVED: To enhance the production yield of a ferroelectric element by a configuration wherein a close contact layer is formed between a substrate and a lower- part electrode. SOLUTION: A ferroelectric element is constituted in such a way an MgO single-crystal substrate which is cleaved in a (100) plane so as to be mirror- polished and treated is used as a substrate 11, that a Ti film as a close contact layer is arranged on it, that a Pt film as a lower-part electrode 13 is arranged on it, that a Pb0.9 La0.1 Ti0.975 O3 (PLT) film as a ferroelectric film 14 is arranged on it and that an Ni-Cr film as an upper-part electrode 15 is arranged on it. The Ti film is used as the close contact layer 12, and its thickness is set in a range of 5 to 50nm or lower. Thereby, even when an Al lead wire is wire- bonded onto the Pt film 13 on it, its exfoliation defect is not generated, and the production yield of the ferroelectric element can be enhanced. |
