| 摘要 |
PROBLEM TO BE SOLVED: To provide formation of a simple photoresist pattern with high precision. SOLUTION: A positive photoresist film 2 and a negative photoresist film 3 are formed on a material body 1 in this order. Then, a predetermined portion of the negative photoresist film 3 is irradiated with a negative photoresist film exposure light. After that, the negative photoresist film 3 is selectively removed by development so as to pattern the negative photoresist film 3 into a predetermined shape. Next, using this patterned negative photoresist film 3 as a mask, the positive photoresist film 2 is irradiated with a positive photoresist film exposure light. Then, the positive photoresist film 2 is selectively removed by development, thereby forming a resist pattern 4 having an overhang portion 4a. |
