发明名称 DEVICE AND METHOD FOR CONTINUOUS VAPOR-DEPOSITION ON FILM
摘要 A device for continuous vapor-depositing on a film a thin layer having a highly accurate and uniform thickness and structure by providing a plurality of EBs (electron guns)/a plurality of evaporation points and the optimum design of the number of evaporation sources and the positions thereof to realize width-direction uniformity and the extremely high productivity. A method for continuous vapor-deposition of a film using the device is also disclosed. The device which continuously forms a single thin layer or multiple thin layers of a dielectric substance of metal having a width (L) of over 500 nm on a continuously running organic polymer film by using such a vapor-depositing system that an evaporation source material is housed in a hearth which is moving at a fixed speed and the evaporation source is continuously supplied to the point where an electron beam is applied. The device has the following features: (1) two or more electron beam applied points are provided for one kind of vapor-depositing material in the width direction of the film; (2) the vertical distance (D) between the electronic beam applied points and the film running is 300 mm; (3) the moving direction and moving speed of the hearth can be set separately, and (4) an appropriate correcting plate is provided between the electron beam applied points and the film so as to uniform the vapor-depositing speed distribution in the width direction.
申请公布号 WO9740206(A1) 申请公布日期 1997.10.30
申请号 WO1997JP01368 申请日期 1997.04.21
申请人 TOYO METALLIZING CO., LTD.;TOHYAMA, SHUNROKU;AOYAGI, TSUTOMU;MOCHIZUKI, KIYOHITO;TANI, SATORU 发明人 TOHYAMA, SHUNROKU;AOYAGI, TSUTOMU;MOCHIZUKI, KIYOHITO;TANI, SATORU
分类号 G02B1/10;C23C14/24;C23C14/30;C23C14/56;(IPC1-7):C23C14/30 主分类号 G02B1/10
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