| 摘要 |
PROBLEM TO BE SOLVED: To reduce the fall time of an output voltage waveform and enable high-speed operation, by bypassing electric charges charged up to a load capacitance by a bypass diode between a power-supply potential and a ground potential and reducing the resistance value only at the time of discharge. SOLUTION: In a second N-well 22 formed on a main surface of a semiconductor substrate 10, a low-density P<-> impurity diffusion region 3 and a high-density N<+> impurity diffusion region 13 are formed. An input terminal, IN is formed at a gate 1 within a first N-well 21 and an output terminal OUT is formed in a drain region 5 of the first N-well 21 and in a P<+> impurity diffusion region 9 of the second N-well 22. A control terminal, CONT is formed in the high- density N<+> impurity diffusion region 13, and a bypass diode is constituted between the control terminal CONT and the P-impurity diffusion region 3. A control voltage of the opposite phase to that of an input voltage is applied to the control terminal CONT, thus reducing the fall time of an output voltage. |
